GSB1386 - GTM

GSB1386 PNP EPITAXIAL SILICON TRANSISTOR

The GSB1386 is a epitaxial planar type PNP silicon transistor . Features *Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A). *Excellent DC current gain characteristics. *Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 .

Features

*Low VCE(sat). VCE(sat) = -0.35V(Typ.) (IC/IB = -4A / -0.1A).
*Excellent DC current gain characteristics.
*Complements the GSD2098/GSD2118/GSD2097. Package Dimensions REF. A Millimeter Min. Max. 4.4 4.6 REF. G Millimeter Min. Max. 3.00 REF. B 4.05 4.25 H 1.50 REF. C 1.50 1.70 I 0.40 0.52 D 1.30 1.50 J 1.40 1.60 E 2.40 2.60 K 0.35 0.41 F 0.89 1.20 L M 5q TYP. 0.70 REF. Absolute Maximum Ratings (Ta = 25к,unless otherwise specified) Parameter Symbol Ratings Unit Junction Temperature Tj +150 ć Storage Temperature Tstg -55 ~ +150 ć Collector to Base Voltage VCBO -30 V.