Applications The GS8161E18D(GT/D)/GS8161E32D(D)/GS8161D36D(GT/D) is an 18,874,368-bit high performance synchronous SRAM with a 2-bit burst address counter. Although of a type originally developed for Level 2 Cache applications supporting high performance CPUs, the device now finds application in synchronous SRAM applications, ranging from DSP main store to n.
• FT pin for user-configurable flow through or pipeline operation
• Dual Cycle Deselect (DCD) operation
• IEEE 1149.1 JTAG-compatible Boundary Scan
• 2.5 V or 3.3 V +10%/
–10% core power supply
• 2.5 V or 3.3 V I/O supply
• LBO pin for Linear or Interleaved Burst mode
• Internal input resistors on mode pins allow floating mode pins
• Default to Interleaved Pipeline mode
• Byte Write (BW) and/or Global Write (GW) operation
• Internal self-timed write cycle
• Automatic power-down for portable applications
• JEDEC-standard 165-bump BGA package
• RoHS-compliant 100-pin TQFP and 165-bump BGA availab.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS8161E18D |
GSI Technology |
18Mb SyncBurst SRAMs | |
2 | GS8161E18DGT |
GSI Technology |
18Mb SyncBurst SRAMs | |
3 | GS8161E18 |
GSI |
(GS8161E18 - GS8161E36) Sync Burst SRAMs | |
4 | GS8161E18B |
GSI Technology |
(GS8161E18B - GS8161E36B) Sync Burst SRAMs | |
5 | GS8161E32 |
GSI |
(GS8161E18 - GS8161E36) Sync Burst SRAMs | |
6 | GS8161E32B |
GSI Technology |
(GS8161E18B - GS8161E36B) Sync Burst SRAMs | |
7 | GS8161E32D |
GSI Technology |
18Mb SyncBurst SRAMs | |
8 | GS8161E32DD |
GSI Technology |
18Mb SyncBurst SRAMs | |
9 | GS8161E36 |
GSI |
(GS8161E18 - GS8161E36) Sync Burst SRAMs | |
10 | GS8161E36B |
GSI Technology |
(GS8161E18B - GS8161E36B) Sync Burst SRAMs | |
11 | GS8161E36D |
GSI Technology |
18Mb SyncBurst SRAMs | |
12 | GS8161E36DD |
GSI Technology |
18Mb SyncBurst SRAMs |