The GS71108A is a high speed CMOS Static RAM organized as 131,072 words by 8 bits. Static design eliminates the need for external clocks or timing strobes. The GS operates on a single 3.3 V power supply and all inputs and outputs are TTLcompatible. The GS71108A is available in a 6 mm x 8 mm Fine Pitch BGA package, as well as in 300 mil and 400 mil SOJ and 40.
• Fast access time: 7, 8, 10, 12 ns
• CMOS low power operation: 140/120/95/80 mA at minimum cycle time
• Single 3.3 V power supply
• All inputs and outputs are TTL-compatible
• Fully static operation
• Industrial Temperature Option:
–40° to 85°C
• Package line up J: 400 mil, 32-pin SOJ package TP: 400 mil, 32-pin TSOP Type II package SJ: 300 mil, 32-pin SOJ package U: 6 mm x 8 mm Fine Pitch Ball Grid Array package
128K x 8 1Mb Asynchronous SRAM
A3 A2 A1 A0 CE DQ1 DQ2 VDD VSS DQ3 DQ4 WE A16 A15 A14 A13 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16
7, 8, 10, 12 ns 3.3 V VDD Center VDD and VSS
32 31 3.
The GS71108A is a high speed CMOS Static RAM organized as 131,072 words by 8 bits. Static design eliminates the need for.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GS71108AJ |
GSI Technology |
128K x 8 1Mb Asynchronous SRAM | |
2 | GS71108ASJ |
GSI Technology |
128K x 8 1Mb Asynchronous SRAM | |
3 | GS71108AU |
GSI Technology |
1Mb Asynchronous SRAM | |
4 | GS7111 |
GStek |
Low Noise 300mA LDO Regulator | |
5 | GS71116AGP |
GSI Technology |
1Mb Asynchronous SRAM | |
6 | GS71116AJ |
GSI Technology |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM | |
7 | GS71116ATP |
GSI Technology |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM | |
8 | GS71116TJ |
GSI Technology |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM | |
9 | GS71116TP |
GSI Technology |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM | |
10 | GS71116TU |
GSI Technology |
(GS71116x) 64K x 16 1Mb Asynchronous SRAM | |
11 | GS7112 |
GStek |
1.2A Ultra Low Dropout Linear Regulator | |
12 | GS7116 |
GStek |
500mA Ultra Low Dropout Linear Regulator |