FEATURES This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discret.
This high voltage MOSFET uses an advanced termination Robust High Voltage Termination scheme to provide enhanced voltage-blocking capability Avalanche Energy Specified without degrading performance over time. In addition, this Source-to-Drain Diode Recovery Time Comparable to a advanced MOSFET is designed to withstand high energy in Discrete Fast Recovery Diode avalanche and commutation modes. The new energy Diode is Characterized for Use in Bridge Circuits efficient design also offers a drain-to-source diode with a fast recovery time. Designed for high voltage, high speed IDSS and.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GPT18N50 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
2 | GPT18N50C |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
3 | GPT18N50CD |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
4 | GPT18N60 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
5 | GPT18N60D |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
6 | GPT1000A |
Generalplus |
General Touch Sensor Controller | |
7 | GPT1001A |
Generalplus |
General Touch Sensor Controller | |
8 | GPT10N45 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
9 | GPT10N45D |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
10 | GPT10N50A |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
11 | GPT10N50AD |
Greatpower |
POWER FIELD EFFECT TRANSISTOR | |
12 | GPT10N60 |
Greatpower |
POWER FIELD EFFECT TRANSISTOR |