GP350MHB06S - Dynex Semiconductor

GP350MHB06S Half Bridge IGBT Module

GP350MHB06S GP350MHB06S Half Bridge IGBT Module Replaces January 2000 version, DS4923-4.0 DS4923-5.0 October 2001 FEATURES s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) (max) (max) (max) 600V 2.0V 500A 350A 1000A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2.

Features

s s s s KEY PARAMETERS VCES VCE(sat) IC25 IC75 IC(PK) (typ) (max) (max) (max) 600V 2.0V 500A 350A 1000A n - Channel High Switching Speed Low Forward Voltage Drop Isolated Base APPLICATIONS s s PWM Motor Control UPS 11(C2) 1(E1C2) 2(E2) 6(G2) 7(E2) 3(C1) 5(E1) 4(G1) The Powerline range of modules includes half bridge, chopper, dual and single switch configurations covering voltages from 600V to 3300V and currents up to 2400A. The GP350MHB06S is a half bridge 600V n channel enhancement mode insulated gate bipolar transistor (IGBT) module. The module is suitable for a variety of medium volta.