GP3134K - GreenPower

GP3134K 20V N-Channel MOSFET

Product Summary V(BR)DSS 20V RDS(on)MAX 380mΩ@4.5V 450mΩ@2.5V 800mΩ@1.8V ID 0.75A Feature  Lead Free Product is Acquired  Surface Mount Package  N-Channel Switch with Low RDS(on)  Operated at Low Logic Level Gate Drive Application  Load/Power Switching  Interfacing Switching  Battery Management for Ultra Small Portable Electronics  Logic Level Shi.

Features

RACTERISTICS(Ta=25℃ unless otherwise noted) Parameter Symbol Test Condition Min Static Characteristics Drain-source breakdown voltage V(BR)DSS VGS = 0V, ID =250µA 20 Zero gate voltage drain current IDSS VDS =20V,VGS = 0V Gate-body leakage current Gate threshold voltage(2) IGSS VGS(th) VGS =±10V, VDS = 0V VDS =VGS, ID =250µA 0.35 Drain-source on-resistance(2) RDS(on) VGS =4.5V, ID =650mA VGS =2.5V, ID =550mA VGS =1.8V, ID =450mA Forward tranconductance Dynamic characteristics(4) gFS VDS =10V, ID =800mA Input Capacitance Ciss Output Capacitance Coss VDS=16V,VGS=0V,f=1M.