GP1600FSM18 GP1600FSM18 Hi-Reliability Single Switch IGBT Module Replaces May 2000 version, DS5361-1.1 DS5361-2.3 January 2001 FEATURES s s s s High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1600A 3200A APPLICATIONS Exte.
s s s s High Thermal Cycling Capability 1600A Per Module Non Punch Through Silicon Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES (typ) VCE(sat) (max) IC (max) IC(PK) 1800V 3.5V 1600A 3200A APPLICATIONS External connection s s s s High Reliability Inverters Motor Controllers Traction Drives Resonant Converters G Aux C C1 C2 The Powerline range of high power modules includes dual and single switch configurations covering voltages from 1200V to 3300V and currents up to 4800A. The GP1600FSM18 is a single switch 1800V, n channel enhancement mode, insulated gate bipolar transisto.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GP1600FSM12 |
Dynex Semiconductor |
Single Switch IGBT Module Advance Information | |
2 | GP1600FSS12 |
Dynex Semiconductor |
Powerline N-Channel Single Switch IGBT Module Advance Information | |
3 | GP1600FSS18 |
Dynex Semiconductor |
Single Switch IGBT Module | |
4 | GP1600 |
Diotec Electronics |
(GP1xxx) High Voltage Diode Rectifiers | |
5 | GP1601 |
Thinki Semiconductor |
16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes | |
6 | GP1601 |
Taiwan Semiconductor |
Glass Passivated Rectifiers | |
7 | GP1601FSS18 |
Dynex Semiconductor |
Single Switch Low VCE(SAT) IGBT Module | |
8 | GP1602 |
Thinki Semiconductor |
16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes | |
9 | GP1602 |
Taiwan Semiconductor |
Glass Passivated Rectifiers | |
10 | GP1603 |
Thinki Semiconductor |
16.0 Ampere Dual Common Cathode General Purpose Rectifier Diodes | |
11 | GP1603 |
Taiwan Semiconductor |
Glass Passivated Rectifiers | |
12 | GP160306-CSC3 |
CT Micro |
SMD Type Green Emitter |