GMR10H100C - Gamma Microelectronics

GMR10H100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER

Dual center tap schottky rectifier designed for high frequency Switched Mode Supplies. Power Major Ratings and Characteristics Characteristics IF(AV) Rectangular waveform VRRM FEATURES High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Values 2X5 100 0.63 -45 ~ +150 Unit A V V °C VF .

Features

High junction temperature capability Good trade off between leakage current and forward voltage drop Low leakage current Values 2X5 100 0.63 -45 ~ +150 Unit A V V °C VF @5 Apk, TC = 125°C (per leg) TJ range TO-220AB TO-252(DPAK) Base Common Cathode 2 1 1 2 3 2 3 Anode Common Cathode 2 Anode 1 3 1 2 3 Anode Common Cathode 2 Anode 1 3 www.gammamicro.com.tw GMR10H100C V0.1 1 TO-220FPAB MICROELECTRONICS A A Power Discrete GMR10H100C HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MARKING INFORMATION TO - 220AB TO-252-3(DPAK) 10H100C AYW W 10H100C AYW W A : Assembly Locat.