The GM76C8128CL/CLL-W is a 1,048,576 bits static random access memory organized as 131,072 words by 8 bits. Using a 0.6um advanced CMOS technology and operated from a single 2.7V to 5.5V supply. Advanced circuit technique provide both high speed and low power consumption. The device is placed in a low power standby mode with /CS1 high or CS2 low and the outp.
* Fast Speed : 55/70ns at Vcc=5V+/-10% 120/150ns at Vcc=3V+/-10%
* Low Power Standby and Low Power Operation -Standby : 0.11mW Max. at Vcc=5V+/-10% 49.5uW Max. at Vcc=3V+/-10% -Operation : 385mW Max. at Vcc=5V+/-10% DataSheet4U.com 66mW Max. at Vcc=3V+/10%
* Completely Static RAM : No Clock or Timing Strobe Required
* Equal Access and Cycle Time
* TTL compatible inputs and outputs
* Capability of Battery Back-up Operation
* Single +2.7V ~ +5.5V Operation A0
* Standard 32 DIP, SOP and TSOP I A1
A2
DataShee
(Top View) Block Diagram
.
Address Buffer
10
1024 MEMORY CELL ARRAY X 1024 x 1.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GM76C8128CLL |
LG Semicon |
CMOS Static RAM | |
2 | GM76C8128CL |
LG Semicon |
CMOS Static RAM | |
3 | GM76C8128A |
LG Semicon |
CMOS Static RAM | |
4 | GM76C8128AL |
LG Semicon |
CMOS Static RAM | |
5 | GM76C8128ALL |
LG Semicon |
CMOS Static RAM | |
6 | GM76C88 |
LG |
65536 Bit RAM | |
7 | GM76C88 |
GoldStar |
8192 x 8 Bit SRAM | |
8 | GM76C88AL |
LG |
65536 Bit RAM | |
9 | GM76C256C |
Hynix Semiconductor |
32K x8 bit 5.0V Low Power CMOS slow SRAM | |
10 | GM76C256CE |
Hynix Semiconductor |
32K x8 bit 5.0V Low Power CMOS slow SRAM | |
11 | GM76C256CL |
Hynix Semiconductor |
32K x8 bit 5.0V Low Power CMOS slow SRAM | |
12 | GM76C256CLE |
Hynix Semiconductor |
32K x8 bit 5.0V Low Power CMOS slow SRAM |