The GM71C(S)4400C/CL is the new generation dynamic RAM organized 1,048,576 words x 4 bit. GM71C(S)4400C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)4400C/CL offers Fast Page Mode as a high speed access Mode. Multiplexed address inputs permit the GM71C(S)4400C/CL to be pac.
include single power supply of 5V+/-10% tolerance, direct interfacing capability with high performance logic families such as Schottky TTL.
GM71C(S)4400C/CL
1,048,576 WORDS x 4BIT CMOS DYNAMIC RAM
Features
* 1,048,576 Words x 4 Bit Organization
* Fast Page Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time (Unit: ns)
tRAC
GM71C(S)4400C/CL-60 GM71C(S)4400C/CL-70 GM71C(S)4400C/CL-80 60 70 80
tCAC
15 20 20
tRC
110 130 150
tPC
40 45 50
Pin Configuration 20 (26) SOJ
I/O1 I/O2 WE RAS A9 VSS I/O4 I/O3 CAS OE I/O1 I/O2 WE RAS A9
1 2 3 4 5
* Low Power Active : 605/.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GM71C4400CL |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
2 | GM71C4400D |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
3 | GM71C4400DL |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
4 | GM71C4400E |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
5 | GM71C4400EL |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
6 | GM71C4403C |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
7 | GM71C4403D |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
8 | GM71C4403DL |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
9 | GM71C4403E |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
10 | GM71C4403EL |
Hynix Semiconductor |
1M x 4 Bit CMOS DRAM | |
11 | GM71C4256 |
GoldStar |
262144 word x 4 Bit CMOS DRAM | |
12 | GM71C4256A |
GoldStar |
262144 word x 4 Bit CMOS DRAM |