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The GM71C(S)18163C/CL is the new generation dynamic RAM organized 1,048,576 x 16 bit. GM71C(S)18163C/CL has realized higher density, higher performance and various functions by utilizing advanced CMOS process technology. The GM71C(S)18163C/CL offers Extended Data out(EDO) Mode as a high speed access mode. Multiplexed address inputs permit the GM71C(S)18163C/.
* 1,048,576 Words x 16 Bit Organization
* Extended Data Out Mode Capability
* Single Power Supply (5V+/-10%)
* Fast Access Time & Cycle Time
(Unit: ns)
tRAC tCAC
GM71C(S)18163C/CL-5 GM71C(S)18163C/CL-6 GM71C(S)18163C/CL-7 50 60 70 13 15 18
tRC
84 104 124
tHPC
20 25 30
Pin Configuration 42 SOJ
VCC I/O0 I/O1 I/O2 I/O3 VCC I/O4 I/O5 I/O6 I/O7 NC NC WE RAS NC NC A0 A1 A2 A3 VCC
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 42 41 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 24 23 22
* Low Power Active : 1045/935/825mW (MAX) Standby : 11mW (CMOS level : MAX) 0.83mW (L-version : MAX).
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | GM71C17400C |
Hynix Semiconductor |
CMOS DYNAMIC RAM |
|
| 2 | GM71C17400CL |
Hynix Semiconductor |
CMOS DYNAMIC RAM |
|
| 3 | GM71C17403B |
Hynix Semiconductor |
DRAM |
|
| 4 | GM71C17403C |
Hyundai |
CMOS DRAM |
|
| 5 | GM71C17403C |
Hynix Semiconductor |
CMOS DRAM |
|
| 6 | GM71C17403CJ |
Hynix Semiconductor |
CMOS DRAM |
|
| 7 | GM71C17403CL |
Hyundai |
CMOS DRAM |
|
| 8 | GM71C17403CL |
Hynix Semiconductor |
CMOS DRAM |
|
| 9 | GM71C17403CLJ |
Hynix Semiconductor |
CMOS DRAM |
|
| 10 | GM71C17403CLT |
Hynix Semiconductor |
CMOS DRAM |
|
| 11 | GM71C17403CT |
Hynix Semiconductor |
CMOS DRAM |
|
| 12 | GM71C17800C |
Hynix Semiconductor |
1M-WORDS x 8-BIT CMOS DYNAMIC RAM |
|