GLBCX53 - GTM

GLBCX53 PNP SILICON EPITAXIAL TRANSISTOR

P N P S I L I C O N E P I TA X I A L T R A N S I S T O R The GLBCX53 is designed for use in driver stages of audio amplifiers and medium power general purpose amplification. Features Package Dimensions Collector-Emitter Voltage: VCEO=-80V Complementary to GLBCP56 SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 .

Features

Package Dimensions Collector-Emitter Voltage: VCEO=-80V Complementary to GLBCP56 SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Range Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collect Current(DC) Total Power Dissipation Symbol Ratings http://www.DataSheet4U.net/ Unit Tj TsTG VCBO VCEO VEBO IC PD ) +.