Features ISSUED DATE :2005/10/06 REVISED DATE : PNP SILICON PLANAR MEDIUM POWER TRANSISTOR The GL195 is designed for medium power amplifier applications. -60 Volt VCEO 1 Amp continuous current Complementary to GL194 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3.
ISSUED DATE :2005/10/06 REVISED DATE : PNP SILICON PLANAR MEDIUM POWER TRANSISTOR The GL195 is designed for medium power amplifier applications. -60 Volt VCEO 1 Amp continuous current Complementary to GL194 Package Dimensions SOT-223 REF. A C D E I H Millimeter Min. Max. 6.70 7.30 2.90 3.10 0.02 0.10 0° 10° 0.60 0.80 0.25 0.35 REF. B J 1 2 3 4 5 Millimeter Min. Max. 13° TYP. 2.30 REF. 6.30 6.70 6.30 6.70 3.30 3.70 3.30 3.70 1.40 1.80 Absolute Maximum Ratings at Ta = 25 Parameter Junction Temperature Storage Temperature Collector to Base Voltage Collector to Emitter Voltage Emitter to.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GL194 |
GTM |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
2 | GL194A |
GTM |
NPN SILICON PLANAR MEDIUM POWER TRANSISTOR | |
3 | GL195A |
GTM |
PNP SILICON PLANAR MEDIUM POWER TRANSISTOR | |
4 | GL100MN0MP |
Sharp Electrionic Components |
Infrared Emitting Diode | |
5 | GL100MN0MP1 |
Sharp Electrionic Components |
Infrared Emitting Diode | |
6 | GL100MN0MPx |
Sharp Electrionic Components |
Infrared Emitting Diode | |
7 | GL100MN1MP |
Sharp Electrionic Components |
High Power Output Infrared Emitting Diode | |
8 | GL100MN1MP1 |
Sharp Electrionic Components |
High Power Output Infrared Emitting Diode | |
9 | GL100MN1MPx |
Sharp Electrionic Components |
High Power Output Infrared Emitting Diode | |
10 | GL104AS10-1200 |
ETC |
TFT-LCD | |
11 | GL1084 |
Gleam |
5.0A LOW DROPOUT PRECISION LINEAR REGULATORS | |
12 | GL1085 |
Gleam |
3.0A LOW DROPOUT PRECISION LINEAR REGULATORS |