GK120HF120T1H IGBT : z z z z z z R 3 4 5 6 7 10μs :VCE (sat) =2.6 V@ IC =120A ,TC=25℃ 100% RBSOA (3 ) , RoHS O 1 2 : z z z AC DC UPS IC www.DataSheet.co.kr (TC = 25℃,) VCES VGES IC ICM(1) IF IFM TSC PD TJ Tstg Viso - - ER M TC = 80℃ TC = 25℃ TC = 125℃ TC = 125℃ TJ = 150℃ TC = 25℃ f = 50Hz,1 GK120HF120T1H 1200 ±20 120 200 240 120 240 >.
200 120 560 150 10.5 6.2 16.7 190 140 630 200 12.2 9.2 21.4 1270 10 LV SI RBSOA SCSOA ER M www.DataSheet.co.kr VCC = 600V, IC = 120A , RG = 15Ω, VGE =±15V , , TJ = 25℃ VCC = 600V, IC = 120A, RG = 15Ω, VGE =±15V, , TJ = 125℃ VCE = 600V, IC = 120A, VGE = -15V ~ +15V IC = 360A ,VCC = 960V, Vp =1200V, Rg = 4.7Ω, VGE = +15V to 0V, TJ =150°C VCC = 600V, VGE = 15V, TJ = 150℃ IC TJ = 25℃ TJ = 125℃ www.njsme.com O 200 400 7.0 μs Page 2 Rev. 01 06/15/2009 Datasheet pdf - http://www.DataSheet4U.net/ (TJ=25℃,) VFM trr Irr Qrr IF=120A, VGE = 0V IF=120A, di/dt = .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GL125 |
ETC |
Photoresistor | |
2 | GL12516 |
ETC |
Photoresistor | |
3 | GL12528 |
ETC |
Photoresistor | |
4 | GL12537-1 |
ETC |
Photoresistor | |
5 | GL12537-2 |
ETC |
Photoresistor | |
6 | GL12539 |
ETC |
Photoresistor | |
7 | GL12T |
Vishay Siliconix |
Low Capacitance ESD Protection Diodes | |
8 | GL100MN0MP |
Sharp Electrionic Components |
Infrared Emitting Diode | |
9 | GL100MN0MP1 |
Sharp Electrionic Components |
Infrared Emitting Diode | |
10 | GL100MN0MPx |
Sharp Electrionic Components |
Infrared Emitting Diode | |
11 | GL100MN1MP |
Sharp Electrionic Components |
High Power Output Infrared Emitting Diode | |
12 | GL100MN1MP1 |
Sharp Electrionic Components |
High Power Output Infrared Emitting Diode |