GI01L60 - GTM

GI01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters. *Repetitive Avalanche Rated *Simple Drive Requirement *Fast Switching Speed *RoHS Compliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 .

Features

N-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) ID 600V 12 1A The GI01L60 (through-hole version) is available for low-profile applications and suited for AC/DC converters.
*Repetitive Avalanche Rated
*Simple Drive Requirement
*Fast Switching Speed
*RoHS Compliant Package Dimensions TO-251 REF. A B C D E F Millimeter Min. Max. 6.40 6.80 5.20 5.50 6.80 7.20 7.20 7.80 2.30 REF. 0.60 0.90 REF. G H J K L M Millimeter Min. Max. 0.50 0.70 2.20 2.40 0.45 0.55 0.45 0.60 0.90 1.50 5.40 5.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curre.