This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior. Datasheet − production data 3 2 1 TO-220 3 1 D²PAK 3 2 1 TO-220FP Figure 1. Internal schematic diagram Table 1. Device summary Order codes Marking STGB19NC60KDT4 GB19NC60KD STGF19NC60KD STGP19NC60KD GF19NC.
■ Low on-voltage drop (VCE(sat))
■ Low Cres / Cies ratio (no cross conduction
susceptibility)
■ Short circuit withstand time 10 µs
■ IGBT co-packaged with Ultrafast free-wheeling
diode
Applications
■ High frequency inverters
■ Motor drivers
Description
This IGBT utilizes the advanced PowerMESH™ process resulting in an excellent trade-off between switching performance and low on-state behavior.
Datasheet − production data
3 2 1
TO-220
3 1
D²PAK
3 2 1
TO-220FP
Figure 1. Internal schematic diagram
Table 1. Device summary
Order codes
Marking
STGB19NC60KDT4
GB19NC60KD
STGF19NC60KD STGP19N.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GF19NC60HD |
STMicroelectronics |
very fast IGBT | |
2 | GF19NC60SD |
STMicroelectronics |
IGBT | |
3 | GF100N30 |
STMicroelectronics |
IGBT | |
4 | GF10A |
ZOWIE |
Rectifier Diode | |
5 | GF10B |
ZOWIE |
Rectifier Diode | |
6 | GF10D |
ZOWIE |
Rectifier Diode | |
7 | GF10G |
ZOWIE |
Rectifier Diode | |
8 | GF10HF60KD |
STMicroelectronics |
short-circuit rugged IGBT | |
9 | GF10J |
ZOWIE |
Rectifier Diode | |
10 | GF10K |
ZOWIE |
Rectifier Diode | |
11 | GF10M |
ZOWIE |
Rectifier Diode | |
12 | GF10NB60SD |
STMicroelectronics |
low drop IGBT |