Features Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Curr.
Package Dimensions REF. A b c D E L4 L5 Millimeter Min. Max. 4.40 4.80 0.76 1.00 0.36 0.50 8.60 9.00 9.80 10.4 14.7 15.3 6.20 6.60 REF. c1 b1 L e L1 Ø A1 Millimeter Min. Max. 1.25 1.45 1.17 1.47 13.25 14.25 2.54 REF. 2.60 2.89 3.71 3.96 2.60 2.80 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , VGS@10V Continuous Drain Current , VGS@10V Pulsed Drain Current 1 Symbol - /A/H VDS VGS ID @TC=25 ID @TC=100 IDM PD @TC=25 2 Ratings 600/650/700 20 9 5 40 156 1.25 305 9 9 -55 ~ +150 Unit V V A A A W W/ mJ A mJ Total Power Dissipation Linea.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GE01N60 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
2 | GE02N60 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
3 | GE03N70 |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
4 | GE04N70B |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
5 | GE07N70C-A |
GTM |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
6 | GE08P20 |
GTM |
P-CHANNEL ENHANCEMENT MODE POWER MOSFET | |
7 | GE-G24064A-YYH-VZ |
Gleichmann |
LCD | |
8 | GE10000 |
GE |
NPN POWER TRANSISTOR | |
9 | GE10001 |
GE |
NPN POWER TRANSISTOR | |
10 | GE10002 |
GE |
NPN POWER TRANSISTOR | |
11 | GE10003 |
GE |
NPN POWER TRANSISTOR | |
12 | GE10004 |
GE |
NPN POWER TRANSISTOR |