The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT/SiC stress during faults. Accurate and co.
This section summarizes the key features, safety features, and regulatory approvals for the GD3160.
2.1 Key features
• Integrated Galvanic signal isolation (up to 8 kV)
• High gate current integrated: 15 A source/sink capable
• SPI interface for safety monitoring, configuration, and diagnostic reporting
• Supports high switching frequencies: PWM up to 100 kHz
• Fail-safe state management from LV and HV domain for user-selectable safe state
• Programmable gate voltage regulator
• Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
• Configurable desaturati.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GD3162 |
NXP |
Advanced IGBT/SiC gate driver | |
2 | GD32E103C8T6 |
GigaDevice |
32-bit MCU | |
3 | GD32E103CBT6 |
GigaDevice |
32-bit MCU | |
4 | GD32E103R8T6 |
GigaDevice |
32-bit MCU | |
5 | GD32E103RBT6 |
GigaDevice |
32-bit MCU | |
6 | GD32E103T8U6 |
GigaDevice |
32-bit MCU | |
7 | GD32E103TBU6 |
GigaDevice |
32-bit MCU | |
8 | GD32E103V8T6 |
GigaDevice |
32-bit MCU | |
9 | GD32E103VBT6 |
GigaDevice |
32-bit MCU | |
10 | GD32E10x |
GigaDevice |
32-bit MCU | |
11 | GD32E230C4T6 |
GigaDevice |
32-bit MCU | |
12 | GD32E230C6T6 |
GigaDevice |
32-bit MCU |