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GD3160 - NXP

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GD3160 Advanced IGBT/SiC gate driver

The GD3160 is an advanced, single-channel gate driver for IGBTs and SiC power devices. Integrated Galvanic isolation and low on-resistance drive transistors provide high charging and discharging current, low dynamic saturation voltage and rail-to-rail gate voltage control. Current and temperature sense minimizes IGBT/SiC stress during faults. Accurate and co.

Features

This section summarizes the key features, safety features, and regulatory approvals for the GD3160. 2.1 Key features
• Integrated Galvanic signal isolation (up to 8 kV)
• High gate current integrated: 15 A source/sink capable
• SPI interface for safety monitoring, configuration, and diagnostic reporting
• Supports high switching frequencies: PWM up to 100 kHz
• Fail-safe state management from LV and HV domain for user-selectable safe state
• Programmable gate voltage regulator
• Temperature sense compatible with diode-based temperature sensors, NTC and PTC thermistors
• Configurable desaturati.

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