GC01L60 - GTM

GC01L60 N-CHANNEL ENHANCEMENT MODE POWER MOSFET

Features Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, .

Features

Package Dimensions D E S1 TO-92 A S E A T IN G PLANE b1 REF. L e1 e b C A S1 b b1 C Millimeter Min. Max. 4.45 4.7 1.02 0.36 0.51 0.36 0.76 0.36 0.51 REF. D E L e1 e Millimeter Min. Max. 4.44 4.7 3.30 3.81 12.70 1.150 1.390 2.42 2.66 Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS@10V Continuous Drain Current, VGS@10V Pulsed Drain Current 1 Symbol VDS VGS ID @TA=25 ID @TA=100 IDM PD @TC=25 2 Ratings 600 30 160 100 300 0.83 0.5 1 -55 ~ +150 Unit V V mA mA mA W mJ A Total Power Dissipation Single Pulse Avalanche Energy A.