GBI 15A ... GBI 15M Silicon-Bridge Rectifiers Silizium-Brückengleichrichter Nominal current – Nennstrom 5.6 ±0.2 15 A 50…1000 V 32 ±0.2 ±0.2 Repetitive peak reverse voltage Periodische Spitzensperrspannung Plastic case Kunststoffgehäuse ±0.2 32 x 5.6 x 17 [mm] 9g 17 16 Type Typ + 16 Ø 1.2 10 ~ ~ – Weight approx. – Gewicht ca. Plastic material .
eriodische Spitzensperrspannung VRRM [V] 1) 50 100 200 400 600 800 1000
Peak forward surge current, 50 Hz half sine-wave Stoßstrom für eine 50 Hz Sinus-Halbwelle Peak forward surge current, 60 Hz half sine-wave Stoßstrom für eine 60 Hz Sinus-Halbwelle Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms Operating junction temperature
– Sperrschichttemperatur Storage temperature
– Lagerungstemperatur
1
IFSM
220 A
IFSM i2t
240 A
240 A2s
– 50...+150/C
– 50...+150/C
Tj TS
) Valid for one branch
– Gültig für einen Brückenzweig 01.07.03
1
GBI 15A ... GBI 15M Characteristics Max. fwd. .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | GBI15A |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
2 | GBI15B |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
3 | GBI15D |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
4 | GBI15J |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
5 | GBI15K |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
6 | GBI15M |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
7 | GBI10 |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
8 | GBI10A |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
9 | GBI10B |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
10 | GBI10D |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
11 | GBI10G |
Diotec Semiconductor |
Silicon-Bridge Rectifiers | |
12 | GBI10J |
Diotec Semiconductor |
Silicon-Bridge Rectifiers |