PHOTODIODE GaAs PIN photodiode G8522 series High-speed response at low reverse voltage G8522 series are high-speed PIN photodiodes developed for optical communications and are capable of GHz (gigahertz) operation even at a low reverse voltage (2 V or less). Please contact our sales office with your specific needs. Features l High-speed response at low re.
l High-speed response at low reverse voltage G8522-01: 3 GHz Min. (VR=2 V) G8522-02: 1.9 GHz Min. (VR=2 V) G8522-03: 1.5 GHz Min. (VR=2 V) l Low noise, low dark current l Low terminal capacitance Applications l Optical fiber communications l Fiber channels l Gigabit Ethernet s Absolute maximum ratings (Ta=25 °C) Parameter Symbol Reverse voltage VR Max. Operating temperature Storage temperature Topr Tstg Value 30 -40 to +85 -55 to +125 Unit V °C °C s Electrical and optical characteristics (Ta=25 °C) Parameter Symbol Condition G8522-01 Min. Typ. Max. Active area size - - φ40 - Sp.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | G8550 |
GTM |
PNP EPITAXIAL TRANSISTOR | |
2 | G8550S |
GTM |
PNP EPITAXIAL TRANSISTOR | |
3 | G8551 |
GTM |
PNP EPITAXIAL TRANSISTOR | |
4 | G8551S |
GTM |
PNP EPITAXIAL TRANSISTOR | |
5 | G80 |
Mitsumi Electronics |
Detach Connectors | |
6 | G8050 |
GTM |
NPN EPITAXIAL TRANSISTOR | |
7 | G8050S |
GTM |
NPN EPITAXIAL TRANSISTOR | |
8 | G8051 |
GTM |
NPN EPITAXIAL TRANSISTOR | |
9 | G8051S |
GTM |
NPN EPITAXIAL TRANSISTOR | |
10 | G80F903 |
dycmcu |
8051 Microcontroller | |
11 | G80F910 |
dycmcu |
8051 microcontroller ADC | |
12 | G80F910C |
dycmcu |
8051 microcontroller ADC |