G4PH40KD - IRF

G4PH40KD IRG4PH40KD

PD- 91577B IRG4PH40KD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V • Combines low conduction losses with high switching speed • Tighter parameter distribution and higher efficiency than previous generations • IGBT co-packag.

Features

• High short circuit rating optimized for motor control, tsc =10µs, VCC = 720V , TJ = 125°C, VGE = 15V
• Combines low conduction losses with high switching speed
• Tighter parameter distribution and higher efficiency than previous generations
• IGBT co-packaged with HEXFREDTM ultrafast, ultrasoft recovery antiparallel diodes C Short Circuit Rated UltraFast IGBT VCES = 1200V G E VCE(on) typ. = 2.74V @VGE = 15V, IC = 15A n-ch an nel Benefits
• Latest generation 4 IGBT's offer highest power density motor controls possible
• HEXFREDTM diodes optimized for performance with IGBTs. Minimized rec.