G30M65DF2 - STMicroelectronics

G30M65DF2 Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) temperature coefficient an.

Features

 6 µs of minimum short-circuit withstand time
 VCE(sat) = 1.55 V (typ.) @ IC = 30 A
 Tight parameters distribution
 Safer paralleling
 Low thermal resistance
 Soft and very fast recovery antiparallel diode Applications
 Motor control
 UPS
 PFC Description This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the M series of IGBTs, which represent an optimum compromise in performance to maximize the efficiency of inverter systems where low-loss and short-circuit capability are essential. Furthermore, a positive VCE(sat) t.