FZ1200R12KF4 - Eupec

FZ1200R12KF4 IGBT

w w w .D at h S a t e e 4U . m o c European PowerSemiconductor and Electronics Company GmbH + Co. KG Marketing Information FZ 1200 R 12 KF 4 18 screwing depth max. 8 61,5 M8 31,5 130 114 M4 w w w .D 28 t a C S a C E e h E 2,5 18,5 t e U 4 .c m o C E C 7 16,5 G external connection to be done C C G E E E external connection to .

Features

GE IF IFRM VISOL min. 4,5 typ. 2,7 3,3 5,5 90 16 100 0,7 0,8 0,9 1,0 0,10 0,15 170 190 1200 1200 2400 7800 ± 20 1200 2400 2,5 max. 3,2 3,9 6,5 200 400 400 V A A W V A A kV tp=1 ms tC=25°C, Transistor /transistor tp=1ms RMS, f=50 Hz, t= 1 min. Charakteristische Werte / Characteristic values: Transistor Kollektor-Emitter Sättigungsspannung Gate-Schwellenspannung Eingangskapazität Kollektor-Emitter Reststrom Gate-Emitter Reststrom Emitter-Gate Reststrom Einschaltzeit (induktive Last) collector-emitter saturation voltage gate threshold voltage input capacity collector-emitter cut-off current ga.