FXT651 - ETC

FXT651 NPN SILICON PLANAR MEDIUM POWER TRANSISTOR

NPN SILICON PLANAR MEDIUM POWER TRANSISTOR ISSUE 1 – MARCH 94 FEATURES * 60 Volt VCEO * 2 Amps continuous current * Low saturation voltage * Ptot= 1 Watt FXT651 B C E REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power D.

Features

* 60 Volt VCEO
* 2 Amps continuous current
* Low saturation voltage
* Ptot= 1 Watt FXT651 B C E REFER TO ZTX651 FOR GRAPHS ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Power Dissipation at Tamb =25°C Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Ptot Tj:Tstg 80 60 5 6 2 1 E-Line TO92 Compatible VALUE UNIT V V V A A W °C -55 to +200 ELECTRICAL CHARACTERISTICS (at Tamb = 25°C unless otherwise stated). PARAMETER Collector-Base Breakdown Voltage Collector-Emit.