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Ordering number:EN5387 FX901 DC-DC Converter Applications Features · Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting. PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode Package Dimensions unit:m.
· Composite type with a PNP transistor and a 2.5V drive N-channel MOSFET with a built-in low forward-voltage Schottky barrier diode faciliteting high-density mounting.
PNP Epitaxial Planar Silicon Transistor N-Channel MOS Silicon FET Silicon Schottky Barrier Diode
Package Dimensions
unit:mm 2133
[FX901]
Electrical Connection
1:Base 2:Emitter 3:Anode, Source 4:Gate 5, 6:Common (Collector, Cathode, Drain) SANYO:XP5 (Bottom view)
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Allowable Power Dissipation Total Power Dissipation Storage Temperature [TR] Collector-to-Base Voltag.
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