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10A 300V 35ns SBD Type : FSU10A30 For Power Factor Improvement High Frequency Rectification OUTLINE DRAWING FEATURES * Ultra – Fast Recovery * Low Power Loss, High Efficiency * High Surge Capability * Fully Molded Isolation Maximum Ratings Approx Net Weight:1.70g Rating Repetitive Peak Reverse Voltage Average Rectified Output Current RMS Forward Current.
* Ultra
– Fast Recovery
* Low Power Loss, High Efficiency
* High Surge Capability
* Fully Molded Isolation
Maximum Ratings
Approx Net Weight:1.70g
Rating
Repetitive Peak Reverse Voltage
Average Rectified Output Current
RMS Forward Current
Surge Forward Current
Operating JunctionTemperature Range Storage Temperature Range Mounting torque
Symbol VRRM
IO
IF(RMS)
IFSM
Tjw Tstg
FSU10A30
300
10
Tc=90°C
50 Hz,Half Sine Wave Resistive Load
15.7
120
50 Hz Half Sine Wave,1cycle Non-repetitive
- 40 to + 150
- 40 to + 150
0.5 Recommended value
Unit V
A
A
A
°C °C N
•m
Electrical
• Thermal C.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FSU10A20 |
Nihon Inter Electronics |
FRED |
|
| 2 | FSU10A40 |
Nihon Inter Electronics |
FRED |
|
| 3 | FSU10A60 |
Nihon Inter Electronics |
FRD |
|
| 4 | FSU10A60 |
Kyocera |
Fast Recovery Diode |
|
| 5 | FSU10B60 |
Nihon Inter Electronics |
FRED |
|
| 6 | FSU10B60 |
Kyocera |
Fast Recovery Diode |
|
| 7 | FSU10U60 |
Nihon Inter Electronics |
FRED |
|
| 8 | FSU10UC30B |
Nihon Inter Electronics |
FRED |
|
| 9 | FSU04N60A |
IPS |
N-Channel MOSFET |
|
| 10 | FSU05A20 |
Nihon Inter Electronics |
FRED |
|
| 11 | FSU05A30 |
Nihon Inter Electronics |
FRED |
|
| 12 | FSU05A40 |
Nihon Inter Electronics |
FRED |
|