The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifical.
• 4A, -200V, rDS(ON) = 1.60Ω
• Total Dose
- Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event
- Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with
VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate
- Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current
- 3.0nA Per-RAD(Si)/s Typically
• Neutron
- Maintain Pre-RAD Specifications for 1E13 Neutrons/cm2
- Usable to 1E14 Neutrons/cm2
Ordering Information
RAD LEVEL SCREENING LEVEL PART NUMBER/BRAND
10K Commercial FSS.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FSS9230D |
Intersil Corporation |
P-Channel Power MOSFETs | |
2 | FSS923A0D |
Intersil Corporation |
P-Channel Power MOSFETs | |
3 | FSS923A0R |
Intersil Corporation |
P-Channel Power MOSFETs | |
4 | FSS9130D |
Intersil Corporation |
6A/ -100V/ 0.660 Ohm/ Rad Hard/ SEGR Resistant/ P-Channel Power MOSFETs | |
5 | FSS9130R |
Intersil Corporation |
P-Channel Power MOSFETs | |
6 | FSS913A0D |
Intersil Corporation |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs | |
7 | FSS913A0R |
Intersil Corporation |
10A/ -100V/ 0.280 Ohm/ Radiation Hardened/ SEGR Resistant/ P-Channel Power MOSFETs | |
8 | FSS101 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
9 | FSS104 |
Sanyo Semicon Device |
DC/DC Converter Applications | |
10 | FSS106 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
11 | FSS107 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
12 | FSS130D |
Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs |