Ordering number:ENN6401 N-Channel Silicon MOSFET FSS238 Load Switching Applications Features · Low ON resistance. · 4V drive. Package Dimensions unit:mm 2116 [FSS238] 8 5 0.3 4.4 6.0 5.0 1.5 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Pow.
· Low ON resistance.
· 4V drive.
Package Dimensions
unit:mm 2116
[FSS238]
8 5
0.3 4.4 6.0
5.0
1.5
Specifications
Absolute Maximum Ratings at Ta = 25˚C
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg
0.595
1.27
0.43
0.1
1.8max
1
4
0.2
1 : Source 2 : Source 3 : Source 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain SANYO : SOP8
Conditions
Ratings 30 ±20 14
Unit V V A A W ˚C ˚C
PW≤10µs, duty cycle≤1% Mounted on a ceramic board (.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FSS230D |
Intersil Corporation |
8A/ 200V/ 0.440 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
2 | FSS230R |
Intersil Corporation |
N-Channel Power MOSFETs | |
3 | FSS232 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET | |
4 | FSS234 |
Sanyo |
N-Channel Silicon MOSFET | |
5 | FSS234D |
Intersil Corporation |
N-Channel Power MOSFETs | |
6 | FSS234R |
Intersil Corporation |
6A/ 250V/ 0.600 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
7 | FSS23A0D |
Intersil Corporation |
N-Channel Power MOSFETs | |
8 | FSS23A0R |
Intersil Corporation |
9A/ 200V/ 0.330 Ohm/ Radiation Hardened/ SEGR Resistant N-Channel Power MOSFETs | |
9 | FSS23A4D |
Intersil Corporation |
7A/ 250V/ 0.460 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
10 | FSS23A4R |
Intersil Corporation |
N-Channel Power MOSFETs | |
11 | FSS207 |
Sanyo Semicon Device |
Ultrahigh-Speed Switching Applications | |
12 | FSS212 |
Sanyo Semicon Device |
N-Channel Silicon MOSFET |