Ordering number : ENN6919 Features • Low ON-resistance. • Ultrahigh-speed switching. • 2.5V drive. FSS133 P-Channel Silicon MOSFET FSS133 Load Switching Applications Package Dimensions unit : mm 2116 [FSS133] 85 0.1 1.5 1.8max 4.4 0.3 6.0 1 5.0 4 1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain Specifications Abs.
• Low ON-resistance.
• Ultrahigh-speed switching.
• 2.5V drive.
FSS133
P-Channel Silicon MOSFET
FSS133
Load Switching Applications
Package Dimensions
unit : mm 2116
[FSS133] 85
0.1 1.5 1.8max 4.4 0.3 6.0
1 5.0
4
1 : Source 2 : Source 3 : Source 0.2 4 : Gate 5 : Drain 6 : Drain 7 : Drain 8 : Drain
Specifications
Absolute Maximum Ratings at Ta=25°C
0.595 1.27 0.43
SANYO : SOP8
Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature
Symbol
VDSS VGSS
ID IDP PD Tch
Tstg
Electr.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FSS130D |
Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
2 | FSS130R |
Intersil Corporation |
11A/ 100V/ 0.210 Ohm/ Rad Hard/ SEGR Resistant/ N-Channel Power MOSFETs | |
3 | FSS131 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
4 | FSS132 |
Sanyo Semicon Device |
Load Switching Applications | |
5 | FSS134 |
Sanyo Semicon Device |
DC/DC Converter Applications | |
6 | FSS138 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
7 | FSS139 |
Sanyo Semicon Device |
Load Switching Applications | |
8 | FSS13A0D |
Intersil Corporation |
N-Channel Power MOSFETs | |
9 | FSS13A0R |
Intersil Corporation |
N-Channel Power MOSFETs | |
10 | FSS101 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET | |
11 | FSS104 |
Sanyo Semicon Device |
DC/DC Converter Applications | |
12 | FSS106 |
Sanyo Semicon Device |
P-Channel Silicon MOSFET |