2SK2937 Silicon N Channel MOS FET High Speed Power Switching REJ03G1051-0500 (Previous: ADE-208-560C) Rev.5.00 Sep 07, 2005 Features • Low on-resistance RDS =0.026 Ω typ. • High speed switching • 4 V gate drive device can be driven from 5 V source Outline RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM) D G 1. Gate 2. Drain 3. Source 1 2 3 S.
• Low on-resistance RDS =0.026 Ω typ.
• High speed switching
• 4 V gate drive device can be driven from 5 V source
Outline
RENESAS Package code: PRSS0003AD-A (Package name: TO-220FM)
D G
1. Gate 2. Drain 3. Source
1
2 3
S
Rev.4.00 Sep 07, 2005 page 1 of 7
Free Datasheet http://www.Datasheet4U.com
2SK2937
Absolute Maximum Ratings
(Ta = 25°C)
Item Drain to source voltage Gate to source voltage Drain current Drain peak current Body-drain diode reverse drain current Avalanche current Avalanche energy Channel dissipation Channel temperature Storage temperature Notes: 1. PW ≤ 10µs, duty cyc.
The FSFR−XS series includes highly integrated power switches designed for high−efficiency half−bridge resonant converter.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FSFR1600XS |
Fairchild Semiconductor |
Power Switch | |
2 | FSFR1600XS |
ON Semiconductor |
Power Switch | |
3 | FSFR1600 |
Fairchild Semiconductor |
Power Switch | |
4 | FSFR1600 |
Fairchild Semiconductor |
Power Switch | |
5 | FSFR1600L |
Fairchild Semiconductor |
Power Switch | |
6 | FSFR1700 |
Fairchild Semiconductor |
Power Switch | |
7 | FSFR1700L |
Fairchild Semiconductor |
Power Switch | |
8 | FSFR1700US |
Fairchild Semiconductor |
Power Switch | |
9 | FSFR1700USL |
Fairchild Semiconductor |
Power Switch | |
10 | FSFR1700XS |
Fairchild Semiconductor |
Power Switch | |
11 | FSFR1700XS |
ON Semiconductor |
Power Switch | |
12 | FSFR1700XSL |
Fairchild Semiconductor |
Power Switch |