FSF055R4 - Intersil Corporation

FSF055R4 N-Channel Power MOSFETs

The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event Effects (SEE), Single Event Gate Rupture (SEGR) in particular, is combined with 100K RADS of total dose hardness to provide devices wh.

Features

• 25A, 60V, rDS(ON) = 0.020Ω
• Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)
• Single Event - Safe Operating Area Curve for Single Event Effects - SEE Immunity for LET of 36MeV/mg/cm2 with VDS up to 80% of Rated Breakdown and VGS of 10V Off-Bias
• Dose Rate - Typically Survives 3E9 RAD (Si)/s at 80% BVDSS - Typically Survives 2E12 if Current Limited to IDM
• Photo Current - 6.0nA Per-RAD(Si)/s Typically
• Neutron - Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2 - Usable to 3E14 Neutrons/cm2 Ordering Information RAD LEVEL 10K 10K 100K 100K 100K SCREENING LEVEL Commercial TXV .