FSB749 - Fairchild Semiconductor

FSB749 PNP Low Saturation Transistor

FSB749 FSB749 C E B SuperSOTTM-3 PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Sourced from Process PC. Absolute Maximum Ratings* Symbol VCEO VCBO VEBO IC TJ, Tstg Parameter Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage Colle.

Features

nt 500 250 mW °C/W Units © 1999 Fairchild Semiconductor Corporation fsb749.lwpPrPC revA FSB749 PNP Low Saturation Transistor (continued) Electrical Characteristics Symbol Parameter TA = 25°C unless otherwise noted Test Conditions Min Max Units OFF CHARACTERISTICS BVCEO BVCBO BVEBO ICBO Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current IC = 10 mA IC = 100 µA IE = 100 µA VCB = 30 V VCB = 30 V, TA=100°C IEBO Emitter Cutoff Current VEB = 4V 25 35 5 100 10 100 V V V nA uA nA ON CHARACTERISTICS
* hFE DC Current Ga.