FSB660A - Fairchild Semiconductor

FSB660A PNP Transistor

These devices are designed with high-current gain and low saturation voltage with collector currents up to 2 A continuous. C E B SuperSOT™-3 (SOT-23) Ordering Information Part Number FSB660A Marking 660A Package SSOT 3L Packing Method Tape and Reel Absolute Maximum Ratings(1),(2) Stresses exceeding the absolute maximum ratings may damage the device. T.

Features

ing and Storage Junction Temperature Range Value -60 -60 -5 -2 -55 to +150 Unit V V V A °C Notes: 1. These ratings are based on a maximum junction temperature of 150°C. 2. These are steady-state limits. ON Semiconductor should be consulted on applications involving pulsed or low- duty cycle operations. © 2001 Semiconductor Components Industries, LLC FSB660A Rev. 2 1 www.onsemi.com FSB660A — PNP Low Saturation Transistor Thermal Characteristics(3) Values are at TA = 25°C unless otherwise noted. Symbol Parameter Max. PD RθJA Total Device Dissipation Thermal Resistance, Junction to .