FS9532 - VBsemi

FS9532 P-Channel MOSFET

FS9532-VB FS9532-VB Datasheet P-Channel 100 V (D-S) MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) - 100 0.100 at VGS = - 10 V 0.120 at VGS = - 4.5 V ID (A) - 23 - 20 Qg (Typ.) 11.7 TO-220 FULLPAK FEATURES • Halogen-free According to IEC 61249-2-21 Definition • TrenchFET® Power MOSFET • 100 % Rg and UIS Tested • Compliant to RoHS Direct.

Features

• Halogen-free According to IEC 61249-2-21 Definition
• TrenchFET® Power MOSFET
• 100 % Rg and UIS Tested
• Compliant to RoHS Directive 2002/95/EC APPLICATIONS
• Power Switch
• DC/DC Converters S G GDS Top View D P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current (TJ = 150 °C) TC = 25 °C TC = 70 °C ID Pulsed Drain Current IDM Avalanche Current IAS Single Avalanche Energya L = 0.1 mH EAS Maximum Power Dissipationa TC = 25 °C TA = 25 °Cc PD Operating Junct.