FS50VSJ-2 - Mitsubishi Electric Semiconductor

FS50VSJ-2 Nch POWER MOSFET

MITSUBISHI Nch POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE FS50VSJ-2 OUTLINE DRAWING 1.5MAX. Dimensions in mm 4.5 1.3 r 10.5MAX. 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 B 0.5 q w e wr 2.6 ± 0.4 ¡4V DRIVE ¡VDSS ..... 100V ¡rDS (ON) (MAX) .........

Features

emperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 100 ± 20 50 200 50 50 200 70
  –55 ~ +150
  –55 ~ +150 1.2 4.5 Unit V V A A A A A W °C °C g Feb.1999 L = 50µH (1.5) MITSUBISHI Nch POWER MOSFET FS50VSJ-2 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage (Tch = 25° C) Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, .