MITSUBISHI Nch POWER MOSFET FS30SM-3 HIGH-SPEED SWITCHING USE FS30SM-3 OUTLINE DRAWING 15.9MAX. Dimensions in mm 4.5 1.5 r 5.0 f 3.2 2 2 4 20.0 19.5MIN. 4.4 G 0.6 2.8 1.0 q 5.45 w e 5.45 4 wr ¡10V DRIVE ¡VDSS ..... 150V ¡rDS (ON) (MAX) .....
alue VGS = 0V VDS = 0V
Conditions
Ratings 150 ±20 30 120 30 30 120 70
–55 ~ +150
–55 ~ +150 4.8
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS30SM-3
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS = 0V VDS = 150V, V GS = 0V ID = 1mA, VDS = 10.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS3KM-10 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS3KM-14A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS3KM-16A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS3KM-18A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS3KMA-5A |
Mitsubishi |
Nch POWER MOSFET | |
6 | FS3K |
CITC |
3A Surface Mount Fast Rectifiers | |
7 | FS3000 |
Renesas |
Air Velocity Sensor | |
8 | FS300R12KE3 |
Eupec |
IGBT | |
9 | FS300R12KE3 |
Infineon |
IGBT-Module | |
10 | FS300R12KE4 |
Infineon |
IGBT | |
11 | FS300R12KF4 |
eupec GmbH |
IGBT | |
12 | FS300R12OE4 |
Infineon |
IGBT |