MITSUBISHI Nch POWER MOSFET FS30ASH-06 HIGH-SPEED SWITCHING USE FS30ASH-06 OUTLINE DRAWING 6.5 5.0 ± 0.2 Dimensions in mm r 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 2.3MIN. 10MAX. 1.0 A 0.5 ± 0.2 0.8 0.9MAX. 2.3 2.3 2.3 q w e wr q GATE w DRAIN e SOURCE r DRAIN e ¡2.5V DRIVE ¡VDSS .
ature Storage temperature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 60 ±10 30 120 30 30 120 35
–55 ~ +150
–55 ~ +150 0.26
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
MITSUBISHI Nch POWER MOSFET
FS30ASH-06
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 10V, VDS = 0V VDS = 60V, VGS = 0V ID = 1mA, VDS = 10V ID = 15A, VGS = 4V ID = 15A, VGS = 2.5V ID = 15A, VGS = 4V ID = 1.
FS30SM-6-VB www.VBsemi.com FS30SM-6-VB Datasheet N-Channel 600V(D-S) Super Junction Power MOSFET PRODUCT SUMMARY VD.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS30SM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS30SM-5 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS3000 |
Renesas |
Air Velocity Sensor | |
4 | FS300R12KE3 |
Eupec |
IGBT | |
5 | FS300R12KE3 |
Infineon |
IGBT-Module | |
6 | FS300R12KE4 |
Infineon |
IGBT | |
7 | FS300R12KF4 |
eupec GmbH |
IGBT | |
8 | FS300R12OE4 |
Infineon |
IGBT | |
9 | FS300R12OE4P |
Infineon |
IGBT | |
10 | FS300R16KF4 |
Eupec |
IGBT | |
11 | FS300R17KE3 |
Eupec |
IGBT | |
12 | FS300R17KE4 |
Infineon Technologies |
IGBT |