MITSUBISHI Nch POWER MOSFET FS2UM-16A HIGH-SPEED SWITCHING USE FS2UM-16A OUTLINE DRAWING 10.5MAX. r Dimensions in mm 4.5 1.3 3.2 16 12.5MIN. 3.8MAX. 1.0 0.8 2.54 2.54 7.0 φ 3.6 0.5 2.6 q w e wr q GATE w DRAIN e SOURCE r DRAIN e q ¡VDSS .... 800V ¡rDS (ON) (MAX) .....
g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS2UM-16A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 800V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 800 ±30 — — 2 — — 1.2 — — — — — — — — — Typ. — — — — 3 4.6 4.6 2.0 460 45 8 11 13 55 22 1.0 — Max. — — ±10 1 4 .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS30KMH-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS30KMH-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS30KM-03 |
Mitsubishi Electric Semiconductor |
N-channel POWER MOSFET | |
4 | FS30KM-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
5 | FS30KM-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
6 | FS30KM-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
7 | FS30KMJ-03 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
8 | FS30KMJ-06 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
9 | FS30KMJ-2 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
10 | FS30KMJ-3 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
11 | FS3000 |
Renesas |
Air Velocity Sensor | |
12 | FS300R12KE3 |
Eupec |
IGBT |