MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE FS2AS-14A OUTLINE DRAWING 6.5 5.0 ± 0.2 4 Dimensions in mm 5.5 ± 0.2 1.5 ± 0.2 0.5 ± 0.1 1.0MAX. 1.0 0.9MAX. 2.3MIN. 10MAX. 0.5 ± 0.2 2.3 2.3 0.8 2.3 1 2 3 wr q w e r e q ¡VDSS ..... 700V ¡rDS (ON) (MAX.
Unit V V A A W °C °C g Feb.1999 Typical value MITSUBISHI Nch POWER MOSFET FS2AS-14A HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS V (BR) GSS IGSS IDSS VGS (th) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) Parameter (Tch = 25°C) Test conditions ID = 1mA, VGS = 0V IGS = ±100µA, VDS = 0V VGS = ±25V, VDS = 0V VDS = 700V, VGS = 0V ID = 1mA, VDS = 10V ID = 1A, VGS = 10V ID = 1A, VGS = 10V ID = 1A, VDS = 10V VDS = 25V, VGS = 0V, f = 1MHz Limits Min. 700 ±30 — — 2 — — 0.72 — — — — — — — — — Typ. — — — — 3 7.47 7.47 1.2 270 30 5 10 12 33 .
FS2UM-14A-VB FS2UM-14A-VB Datasheet Power MOSFET www.VBsemi.com PRODUCT SUMMARY VDS (V) RDS(on) (Ω) 700 VGS = 10 V.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS2UM-12 |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
2 | FS2UM-16A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
3 | FS2UM-18A |
Mitsubishi Electric Semiconductor |
Nch POWER MOSFET | |
4 | FS200 |
Feeling Technology |
2-PHASE DC MOTOR DRIVER | |
5 | FS200R06KE3 |
eupec |
IGBT-Module | |
6 | FS200R06KE3 |
Infineon |
IGBT | |
7 | FS200R06KL4 |
eupec |
IGBT-Module | |
8 | FS200R07A1E3 |
Infineon |
IGBT-Module | |
9 | FS200R07N3E4R |
Infineon |
IGBT-Module | |
10 | FS200R07N3E4R_B11 |
Infineon |
IGBT | |
11 | FS200R07PE4 |
Infineon |
IGBT | |
12 | FS200R10W3S7_B11 |
Infineon |
IGBT |