MITSUBISHI Nch POWER MOSFET FS10VSJ-2 HIGH-SPEED SWITCHING USE FS10VSJ-2 OUTLINE DRAWING 1.5MAX. Dimensions in mm r 10.5MAX. 4.5 1.3 1.5MAX. 8.6 ± 0.3 9.8 ± 0.5 3.0 +0.3 –0.5 0 –0 +0.3 1 5 0.8 B 0.5 q w e wr 2.6 ± 0.4 ¡4V DRIVE ¡VDSS .... 100V ¡rDS (ON) (MAX) .........
erature Weight Typical value VGS = 0V VDS = 0V
Conditions
Ratings 100 ± 20 10 40 10 10 40 30
–55 ~ +150
–55 ~ +150 1.2
4.5
Unit V V A A A A A W °C °C g
Feb.1999
L = 100µH
(1.5)
MITSUBISHI Nch POWER MOSFET
FS10VSJ-2
HIGH-SPEED SWITCHING USE
ELECTRICAL CHARACTERISTICS
Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) y fs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-c) trr Parameter Drain-source breakdown voltage Gate-source leakage current Drain-source leakage current Gate-source threshold voltage
(Tch = 25° C)
Test conditions ID = 1mA, VGS = 0V VGS = ± 20V, VDS .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FS10VSJ-06 |
Mitsubishi |
Nch POWER MOSFET | |
2 | FS10VS-10 |
Mitsubishi |
Nch POWER MOSFET | |
3 | FS10VS-12 |
Mitsubishi |
Nch POWER MOSFET | |
4 | FS10VS-14A |
Mitsubishi |
Nch POWER MOSFET | |
5 | FS10VS-5 |
Mitsubishi |
Nch POWER MOSFET | |
6 | FS10VS-6 |
Mitsubishi |
Nch POWER MOSFET | |
7 | FS10VS-9 |
Mitsubishi |
Nch POWER MOSFET | |
8 | FS1000F |
Free Sor |
Hall-effect Current Sensor | |
9 | FS1000FL |
YENYO |
1.0A Super Fast Recovery Rectifier | |
10 | FS1001-7R |
Power-One |
100 Watt DC-DC Converters | |
11 | FS1001FL |
YENYO |
1.0A Super Fast Recovery Rectifier | |
12 | FS1002 |
FREE SUN |
High-performance low-power real-time clock |