FS100R12KT4_B11 - Infineon

FS100R12KT4_B11 IGBT-Module

TechnischeInformation/TechnicalInformation IGBT-Module IGBT-modules FS100R12KT4_B11 EconoPACK™2ModulmitTrench/FeldstoppIGBT4undEmitterControlled4Diode EconoPACK™2modulewithtrench/fieldstopIGBT4andEmitterControlled4Diode IGBT,Wechselrichter/IGBT,Inverter HöchstzulässigeWerte/MaximumRatedValues VorläufigeDaten PreliminaryDa.

Features

IC = 100 A, VGE = 15 V Tvj = 25°C Tvj = 125°C Tvj = 150°C Gate-Schwellenspannung Gatethresholdvoltage IC = 3,80 mA, VCE = VGE, Tvj = 25°C Gateladung Gatecharge VGE = -15 V ... +15 V InternerGatewiderstand Internalgateresistor Tvj = 25°C Eingangskapazität Inputcapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Rückwirkungskapazität Reversetransfercapacitance f = 1 MHz, Tvj = 25°C, VCE = 25 V, VGE = 0 V Kollektor-Emitter-Reststrom Collector-emittercut-offcurrent VCE = 1200 V, VGE = 0 V, Tvj = 25°C Gate-Emitter-Reststrom Gate-emitterleakagecurrent VCE = 0 V, VGE .