FRM9130 - Inchange Semiconductor

FRM9130 P-Channel MOSFET Transistor

·-6A, -100V, RDS(on) = 0.55Ω ·Second Generation Rad Hard MOSFET Results From New Design Concepts APPLICATIONS It is specially designed and processed to exhibit minimal characteristic changes to total dose and neutron exposures. Design and processing efforts are also directed to enhance survival to heavy ion (SEE) and/or dose rate (GAMMA DOT) exposure. ABSO.

Features

rk PDF pdfFactory Pro www.fineprint.cn INCHANGE Semiconductor isc N-Channel Mosfet Transistor isc Product Specification FRM9130
·ELECTRICAL CHARACTERISTICS (TC=25℃) SYMBOL PARAMETER CONDITIONS V(BR)DSS Drain-Source Breakdown Voltage VGS= 0; ID= -1mA VGS(TH) Gate Threshold Voltage VDS= VGS; ID= -1mA RDS(ON) Drain-Source On-stage Resistance VGS= -10V; ID= -4A IGSS Gate Source Leakage Current VGS= ±20V;VDS= 0 IDSS Zero Gate Voltage Drain Current VDS= -100V; VGS= 0 VSD Diode Forward Voltage IF= -6A; VGS= 0 MIN MAX UNIT -100 V -2.0 -4 0.55 V Ω 100 nA -1 mA -1.8 V isc websi.