The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of both N and P channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD(Si) and 1000KRAD(Si) with neutron hardness ranging from 1E13n/cm2 for 500V product to 1E14n/cm2 for 100V pr.
• 23A, 200V, RDS(on) = 0.115Ω
• Second Generation Rad Hard MOSFET Results From New Design Concepts
• Gamma Meets Pre-Rad Specifications to 100KRAD(Si) Defined End Point Specs at 300KRAD(Si) and 1000KRAD(Si) Performance Permits Limited Use to 3000KRAD(Si) Survives 3E9RAD(Si)/sec at 80% BVDSS Typically Survives 2E12 Typically If Current Limited to IDM 12.0nA Per-RAD(Si)/sec Typically Pre-RAD Specifications for 1E13 Neutrons/cm2 Usable to 1E14 Neutrons/cm2
• Gamma Dot
• Photo Current
• Neutron
Description
The Intersil Corporation has designed a series of SECOND GENERATION hardened power MOSFETs of.
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FRF250H |
Intersil |
N-Channel Power MOSFET | |
2 | FRF250R |
Intersil |
N-Channel Power MOSFET | |
3 | FRF254D |
Intersil |
N-Channel Power MOSFET | |
4 | FRF254H |
Intersil |
N-Channel Power MOSFET | |
5 | FRF254R |
Intersil |
N-Channel Power MOSFET | |
6 | FRF2001CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
7 | FRF2002CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
8 | FRF2003CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
9 | FRF2004CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
10 | FRF2005CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
11 | FRF2006CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers | |
12 | FRF2007CT |
CUMSUMI |
Isolated 20.0 AMPS. Glass Passivated Fast Recovery Rectifiers |