FR1N10 - OuCan

FR1N10 100V N-Channel MOSFET

Product Summary The AOH3110 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 1.0A < 700mΩ .

Features

mbient A D Steady-State RθJA 33 60 Maximum Junction-to-Lead Steady-State RθJL 30 Max 40 75 40 Units V V A A mJ W °C Units °C/W °C/W °C/W Page 1 of 5 AOH3110/FR1N10 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 100 V IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 1.7 2.3 2.9 V ID(ON) On state drain current .