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This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 1.7 A, 900 V, RDS(on) = 7.2 Ω (Max.) @ VGS = 10 V, ID = 0.85 A
• Low Gate Charge (Typ. 12 nC)
• Low Crss (Typ. 5.5 pF)
• 100% Avalanche Tested
• RoHS Compliant
D D
G S
D-PAK
GDS
I-PAK
G
S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
* 4
4
* <
4
<
!5 8
Parameter
*
0,-2.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQU2N100 |
Fairchild Semiconductor |
1000V N-Channel MOSFET |
|
| 2 | FQU2N30 |
Fairchild Semiconductor |
300V N-Channel MOSFET |
|
| 3 | FQU2N40 |
Fairchild Semiconductor |
400V N-Channel MOSFET |
|
| 4 | FQU2N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 5 | FQU2N50B |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 6 | FQU2N50B |
ON Semiconductor |
N-Channel MOSFET |
|
| 7 | FQU2N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 8 | FQU2N60C |
ON Semiconductor |
N-Channel MOSFET |
|
| 9 | FQU2N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|
| 10 | FQU2N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET |
|
| 11 | FQU20N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 12 | FQU20N06L |
Fairchild Semiconductor |
N-Channel MOSFET |
|