This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. These devices are suitable for switched mode power.
• 3.3 A, 800 V, RDS(on) = 1.95 Ω (Max.) @ VGS = 10 V, ID = 1.65 A
• Low Gate Charge (Typ. 31 nC)
• Low Crss (Typ. 14 pF)
• 100% Avalanche Tested
• 100% Package Isolation Tested
D
GDS
G
TO-220F
Absolute Maximum Ratings TC = 25°C unless otherwise noted.
Symbol VDSS ID
IDM VGSS EAS IAR EAR dv/dt PD
TJ, TSTG
TL
Parameter
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C) - Continuous (TC = 100°C)
Drain Current - Pulsed
Gate-Source Voltage
Single Pulsed Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Power Dissipation (TC = 25°C) - .
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQPF6N80 |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
2 | FQPF6N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
3 | FQPF6N80CT |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
4 | FQPF6N15 |
Fairchild Semiconductor |
150V N-Channel MOSFET | |
5 | FQPF6N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
6 | FQPF6N40C |
Fairchild Semiconductor |
400V N-Channel MOSFET | |
7 | FQPF6N40CF |
Fairchild Semiconductor |
N-Channel MOSFET | |
8 | FQPF6N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET | |
9 | FQPF6N60 |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
10 | FQPF6N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
11 | FQPF6N70 |
Fairchild Semiconductor |
700V N-Channel MOSFET | |
12 | FQPF6N90 |
Fairchild Semiconductor |
900V N-Channel MOSFET |