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These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize onstate resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well .
• 13 A, 500 V, RDS(on) = 480 mΩ (Max.) @ VGS = 10 V, ID = 6.5 A
• Low Gate Charge (Typ. 43 nC)
• Low Crss (Typ. 20 pF)
• 100% Avalanche Tested
D
GDS
TO-220
GDS
TO-220F
G S
Absolute Maximum Ratings TC = 25oC unless otherwise noted.
Symbol
Parameter
VDSS
Drain-Source Voltage
ID Drain Current - Continuous (TC = 25.
FQPF13N50C - ON Semiconductor
These N-Channel enhancement mode power field effect transistors are produced using ON Semiconductor’s proprietary, pl.
FQPF13N50C - INCHANGE
Isc N-Channel MOSFET Transistor INCHANGE Semiconductor FQPF13N50C ·FEATURES ·With TO-220F package ·Low input capacitan.
| No. | Partie # | Fabricant | Description | Fiche Technique |
|---|---|---|---|---|
| 1 | FQPF13N50 |
Fairchild Semiconductor |
500V N-Channel MOSFET |
|
| 2 | FQPF13N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 3 | FQPF13N06 |
Fairchild Semiconductor |
60V N-Channel MOSFET |
|
| 4 | FQPF13N06L |
Fairchild Semiconductor |
60V LOGIC N-Channel MOSFET |
|
| 5 | FQPF13N10 |
Fairchild Semiconductor |
100V N-Channel MOSFET |
|
| 6 | FQPF13N10L |
Fairchild Semiconductor |
100V LOGIC N-Channel MOSFET |
|
| 7 | FQPF10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 8 | FQPF10N20C |
Fairchild Semiconductor |
200V N-Channel MOSFET |
|
| 9 | FQPF10N20C |
INCHANGE |
N-Channel MOSFET |
|
| 10 | FQPF10N50CF |
Fairchild Semiconductor |
N-Channel MOSFET |
|
| 11 | FQPF10N60 |
Oucan Semi |
N-Channel MOSFET |
|
| 12 | FQPF10N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET |
|