FQPF12N50 - Oucan Semi

FQPF12N50 12A N-Channel MOSFET

Product Summary The FQP12N50 & FQPF12N50 have been fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability these parts can be adopted quickly into new and existing offline po.

Features

0 5 12
* 8.4
* TC=25°C Power Dissipation B Derate above 25oC PD 250 2 50 0.4 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TL 300 Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Symbol RθJA RθCS FQP12N50/FQB12N50 65 0.5 FQPF12N50 65 -- Maximum Junction-to-Case RθJC
* Drain current limited by maximum junction temperature. 0.5 2.5 Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless o.