These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well.
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• 85A, 60V, RDS(on) = 0.010Ω @VGS = 10 V Low gate charge ( typical 86 nC) Low Crss ( typical 165 pF) Fast switching 100% avalanche tested Improved dv/dt capability 175°C maximum junction temperature rating
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TO-220
FQP Series
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Absolute Maximum Ratings
Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL
TC = 25°C unless otherwise noted
Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current - Continuous (TC = 100°C) Drain Current - Pulsed
FQP85N06 60
(Note 6)
Units V A A A V mJ A mJ V/ns W W/°C °C °C
85 60 300 ± 25 810 85 16.0 7..
No. | Partie # | Fabricant | Description | Fiche Technique |
---|---|---|---|---|
1 | FQP8N25 |
Fairchild Semiconductor |
250V N-Channel MOSFET | |
2 | FQP8N50 |
OuCan |
9A N-Channel MOSFET | |
3 | FQP8N60 |
AOKE |
600V N-Channel MOSFET | |
4 | FQP8N60 |
OuCan |
8A N-Channel MOSFET | |
5 | FQP8N60C |
Fairchild Semiconductor |
600V N-Channel MOSFET | |
6 | FQP8N80 |
Oucan Semi |
7.4A N-Channel MOSFET | |
7 | FQP8N80C |
Fairchild Semiconductor |
800V N-Channel MOSFET | |
8 | FQP8N90C |
Fairchild Semiconductor |
900V N-Channel MOSFET | |
9 | FQP8N90C |
ON Semiconductor |
N-Channel MOSFET | |
10 | FQP8P10 |
Fairchild Semiconductor |
100V P-Channel MOSFET | |
11 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET | |
12 | FQP10N20 |
Fairchild Semiconductor |
200V N-Channel MOSFET |